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| Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated high efficiency rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYW29 series QUICK REFERENCE DATA SYMBOL VRRM VF IF(AV) trr PARAMETER BYW29Repetitive peak reverse voltage Forward voltage Forward current Reverse recovery time MAX. 100 100 0.895 8 25 MAX. 150 150 0.895 8 25 MAX. 200 200 0.895 8 25 UNIT V V A ns PINNING - TO220AC PIN 1 2 tab DESCRIPTION cathode (k) anode (a) cathode (k) PIN CONFIGURATION tab SYMBOL a k 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 square wave; = 0.5; Tmb 128 C sinusoidal; a = 1.57; Tmb 130 C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 8 7.3 11.3 16 80 88 32 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s C C IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Tmb 128 C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air - BYW29 series TYP. 60 MAX. 2.7 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.80 0.92 1.1 0.3 2 MAX. 0.895 1.05 1.3 0.6 10 UNIT V V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 10 A; VR 30 V; Tj = 100 C; -dIF/dt = 50 A/s IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 4 20 1 1 MAX. 11 25 2 UNIT nC ns A V October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series I dI F dt F 8 7 PF / W Vo = 0.791 V Rs = 0.013 Ohms BYW29 Tmb(max) / C a = 1.57 1.9 2.2 128.4 131.1 133.8 136.5 139.2 141.9 144.6 147.3 t 6 rr time 5 4 3 4 2.8 Q I R I s 10% 100% 2 1 rrm 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 I F 100 IF=10A time IF=1A V F V V F time 10 fr 1 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 C. 12 10 8 6 PF / W Vo = 0.791 V Rs = 0.013 Ohms BYW29 Tmb(max) / C D = 1.0 120.3 123 trr / ns 1000 0.5 0.2 0.1 128.4 133.8 139.2 144.6 T t 100 IF=10A IF=1A 4 I tp D= tp T 10 2 0 0 2 4 6 IF(AV) / A 8 10 150 12 1 1 10 dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D. Fig.6. Maximum trr at Tj = 100 C. October 1994 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series 10 Irrm / A 100 Qs / nC IF=10A 1 IF=1A IF=10A 5A 2A 1A 10 0.1 0.01 1 10 -dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum Irrm at Tj = 25 C. Fig.10. Maximum Qs at Tj = 25 C. 10 Irrm / A 10 Zth (K/W) IF=10A 1 IF=1A 1 0.1 0.1 P D tp t 0.01 1 10 -dIF/dt (A/us) 100 0.01 10 us 1 ms tp / s 0.1 s 10 s Fig.8. Maximum Irrm at Tj = 100 C. Fig.11. Transient thermal impedance; Zth j-mb = f(tp). 30 IF / A Tj=150 C Tj=25 C BYW29 20 typ 10 max 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYW29 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.12. TO220AC; pin 1 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 5 Rev 1.100 |
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